Pharos Technlogy

Reference cells	Calibrated Ge detectors are semiconductor light sensors that generate a current or voltage when the P-N junc-tion in the semiconductor is illuminated by light. ◆ Excellent linearity with respect to incident light ◆ Low noise & Long life ◆ Wide spectral response range ◆ Mechanically rugged ◆ Compact and lightweight Ge photodiodes are sensitive in the near infrared spectrum from 800 - 1800 nm. They are AR Coated for 1300 to 1550 nm and are packaged in a can and on a square ceramic substrate respectively.
cSi mcSi CIGS
DSSC OPV aSi
aSi uSi
Detectors
Si
InGaAs
Ge

	Specifications	Ge
	Spectral Response Range:	800 - 1800 nm
	NEP(W/Hz^1/2):	1x10^-12@1500nm
	Dark Current (Vr=1V):	1µA
	Terminal Capacitance(Vr=1V):	3250pF
	Active Area Size:	7 mm^2
	Package:	Anodized aluminum
	Curr-Volt Connector:	BNC connector
	Traceable:	NIST
	Note: For more types, please contact sales engineer.


Calibration